AFN6812W Description
AFN6812W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN6812W 100V N-Channel Enhancement Mode MOSFET.
AFN6812W Key Features
- ID=3.6A,RDS(ON)=105mΩ@VGS=10V
- ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V
- Super high density cell design for extremely
- TSOP-6 package design
- Power Management in Note book
- LED Display
- DC-DC System
- LCD Panel