AFN6812W Datasheet | Alfa-MOS

Description AFN6812W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TSOP-6 ) 100V N-Channel Enhancement Mode MOSFET Features - ID=3.6A,RDS(ON)=105mΩ@VGS=10V - ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - TSOP-6 package design Application - Power Management in Note book - LED Display - DC-DC System - LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 Ordering Information Part Ordering No. Part Marking Package AFN6812WTS6RG N12YW TSOP-6 ※ N12 parts code ※Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFN6812WTS6RG : 7” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.A Dec. 2024 Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page...