Download the AFN6812W datasheet PDF.
This datasheet also covers the AFN6812W-Alfa variant, as both devices belong to the same 100v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
AFN6812W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Key Features
ID=3.6A,RDS(ON)=105mΩ@VGS=10V.
ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V.
Super high density cell design for extremely
low RDS (ON).
Full PDF Text Transcription for AFN6812W (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AFN6812W. For precise diagrams, and layout, please refer to the original PDF.
Alfa-MOS Technology General Description AFN6812W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These ...
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rench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN6812W 100V N-Channel Enhancement Mode MOSFET Features ID=3.6A,RDS(ON)=105mΩ@VGS=10V ID=2.8A,RDS(ON)=125mΩ@VGS=4.
AFN6812W Datasheet
