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AFN6812W - 100V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN6812W, a member of the AFN6812W-Alfa 100V N-Channel Enhancement Mode MOSFET family.

Description

AFN6812W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • ID=3.6A,RDS(ON)=105mΩ@VGS=10V.
  • ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TSOP-6 package design.

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Datasheet Details

Part number AFN6812W
Manufacturer Alfa-MOS
File Size 819.48 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN6812W Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN6812W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN6812W 100V N-Channel Enhancement Mode MOSFET Features  ID=3.6A,RDS(ON)=105mΩ@VGS=10V  ID=2.8A,RDS(ON)=125mΩ@VGS=4.
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