AFN6810W Datasheet | Alfa-MOS

Description AFN6810W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TSOP-6 ) 100V N-Channel Enhancement Mode MOSFET Features z 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TSOP-6 package design Application z Power Management in Note book z LED Display z DC-DC System z LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 Ordering Information Part Ordering No. Part Marking Package AFN6810WTS6RG N10YW TSOP-6 ※ N10 ※Y ※W parts code year code ( 0 ~ 9 ) week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFN6810WTS6RG : 7” Tape & Reel...