Alfa-MOS AFN6810W
N-Channel MOSFET
| Part No. | AFN6810W |
|---|---|
| Datasheet | AFN6810W Download |
| Manufacturer |  Alfa-MOS |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN6810W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( TSOP-6 ) AFN6810W 100V N-Channel Enhancement Mode MOSFETFEATURES
z 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TSOP-6 package design Application z Power Management in Note book z LED Display z DC-DC System z LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1DESCRIPTION
Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 Ordering Information Part Ordering No. Part Marking Package AFN6810WTS6RG N10YW TSOP-6 ※ N10 ※Y ※W parts code year code ( 0 ~ 9 ) week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFN6810WTS6RG : 7” Tape & Reel ;
