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AFN6810W - N-Channel MOSFET

This page provides the datasheet information for the AFN6810W, a member of the AFN6810W-Alfa N-Channel MOSFET family.

Description

AFN6810W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TSOP-6 package design.

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Datasheet Details

Part number AFN6810W
Manufacturer Alfa-MOS
File Size 339.82 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6810W Datasheet
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Alfa-MOS Technology General Description AFN6810W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN6810W 100V N-Channel Enhancement Mode MOSFET Features z 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.
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