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AFN6830 Datasheet 30v N-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN6830, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( TSOP-6 ) AFN6830 30V N-Channel Enhancement Mode MOSFET

Key Features

  • 30V/3.6A,RDS(ON)=75mΩ@VGS=10V.
  • 30V/3.0A,RDS(ON)=85mΩ@VGS=4.5V.
  • 30V/2.2A,RDS(ON)=155mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TSOP-6 package design.

More Datasheets from Alfa-MOS

Part Number Description
AFN6800WS N-Channel MOSFET
AFN6802WS N-Channel MOSFET
AFN6804S N-Channel MOSFET
AFN6810W N-Channel MOSFET
AFN6812W 100V N-Channel Enhancement Mode MOSFET
AFN6820 N-Channel MOSFET
AFN6870S N-Channel MOSFET
AFN6872S 150V N-Channel Enhancement Mode MOSFET
AFN6882S N-Channel MOSFET
AFN6003S N-Channel Enhancement Mode MOSFET

AFN6830 Distributor