AFN6830 Datasheet | Alfa-MOS

Description AFN6830, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TSOP-6 ) 30V N-Channel Enhancement Mode MOSFET Features - 30V/3.6A,RDS(ON)=75mΩ@VGS=10V - 30V/3.0A,RDS(ON)=85mΩ@VGS=4.5V - 30V/2.2A,RDS(ON)=155mΩ@VGS=2.5V - Super high density cell design for extremely low RDS (ON) - TSOP-6 package design Application - Power Management in Note book - LED Display - DC-DC System - LCD Panel PPin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 Ordering Information Part Ordering No. Part Marking Package AFN6830TS6RG 30YW TSOP-6 ※ 30 parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFN6830TS6RG : 7” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.D Sep. 2022 Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page 1 Alfa-MOS Technology 30V N-Channel Enhancement Mode MOSFET Absolute Maximum...