Alfa-MOS AFN6830
30V N-Channel MOSFET
| Part No. | AFN6830 |
|---|---|
| Datasheet | AFN6830 Download |
| Manufacturer |  Alfa-MOS |
| Description | 30V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN6830, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( TSOP-6 ) AFN6830 30V N-Channel Enhancement Mode MOSFETFEATURES
● 30V/3.6A,RDS(ON)=75mΩ@VGS=10V● 30V/3.0A,RDS(ON)=85mΩ@VGS=4.5V
● 30V/2.2A,RDS(ON)=155mΩ@VGS=2.5V
● Super high density cell design for extremely low RDS (ON)
● TSOP-6 package design Application
● Power Management in Note book
● LED Display
● DC-DC System
● LCD Panel PPin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1
DESCRIPTION
Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 Ordering Information Part Ordering No. Part Marking Package AFN6830TS6RG 30YW TSOP-6 ※ 30 parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFN6830TS6RG : 7” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp.
