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AFN6830 - 30V N-Channel MOSFET

Download the AFN6830 datasheet PDF. This datasheet also covers the AFN6830-Alfa variant, as both devices belong to the same 30v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN6830, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/3.6A,RDS(ON)=75mΩ@VGS=10V.
  • 30V/3.0A,RDS(ON)=85mΩ@VGS=4.5V.
  • 30V/2.2A,RDS(ON)=155mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TSOP-6 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN6830-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN6830
Manufacturer Alfa-MOS
File Size 348.22 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet AFN6830 Datasheet

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN6830, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN6830 30V N-Channel Enhancement Mode MOSFET Features  30V/3.6A,RDS(ON)=75mΩ@VGS=10V  30V/3.0A,RDS(ON)=85mΩ@VGS=4.5V  30V/2.2A,RDS(ON)=155mΩ@VGS=2.
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