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AFN6870S - N-Channel MOSFET

This page provides the datasheet information for the AFN6870S, a member of the AFN6870S-Alfa N-Channel MOSFET family.

Description

AFN6870S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 100V/20A,RDS(ON)=6.0mΩ@VGS=10V z 100V/15A,RDS(ON)=8.0mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design.

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Datasheet Details

Part number AFN6870S
Manufacturer Alfa-MOS
File Size 315.00 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6870S Datasheet
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Alfa-MOS Technology AFN6870S 100V N-Channel Enhancement Mode MOSFET General Description AFN6870S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z 100V/20A,RDS(ON)=6.0mΩ@VGS=10V z 100V/15A,RDS(ON)=8.0mΩ@VGS=4.
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