AFN6870S Datasheet | Alfa-MOS

Description AFN6870S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z 100V/20A,RDS(ON)=6.0mΩ@VGS=10V z 100V/15A,RDS(ON)=8.0mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design Application z Networking / Tele / Server z LED Lighting Applications z Quick Charger Applications z DC-DC Primary Side Switch Pin Define Pin 1~3 4 5~8 Symbol S G D Description Source Gate Drain Ordering Information Part Ordering No. Part Marking Package AFN6870SFN568RG 6870S DFN5X6-8L ※ 6870S : Parts Code ※ YYMMDD : Date Code ※ AFN6870SFN568RG : 13”Tape & Reel ; Pb- Free ; Halogen-...