AFN6872S - 150V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN6872S, a member of the AFN6872S-Alfa 150V N-Channel Enhancement Mode MOSFET family.

Description

AFN6872S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

ID=20A,RDS(ON)=18mΩ@VGS=10V.
ID=15A,RDS(ON)=20mΩ@VGS=6V.
Super high density cell design for extremely low RDS (ON).
DFN5X6-8L package design.

Alfa-MOS

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Datasheet Details

Part number	AFN6872S
Manufacturer	Alfa-MOS
File Size	499.59 KB
Description	150V N-Channel Enhancement Mode MOSFET
Datasheet	AFN6872S Datasheet
Additional preview pages of the AFN6872S datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology AFN6872S 150V N-Channel Enhancement Mode MOSFET General Description AFN6872S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Published: Jan 15, 2025 |