Alfa-MOS AFN6872S
150V N-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
AFN6872S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( DFN5X6-8L )FEATURES
● ID=20A,RDS(ON)=18mΩ@VGS=10V● ID=15A,RDS(ON)=20mΩ@VGS=6V
● Super high density cell design for extremely low RDS (ON)
● DFN5X6-8L package design Application
● Networking / Telecom / Server
● LED Lighting
APPLICATIONS
● Quick ChargerAPPLICATIONS
● DC-DC Primary Side Switch Pin Define Pin 1~3 4 5~8 Symbol S G DDESCRIPTION
Source Gate Drain Ordering Information Part Ordering No. Part Marking Package AFN6872SFN568RG 6872S DFN5X6-8L ※ 6872S : Parts Code ※ YYMMDD : Date Code ※ AFN6872SFN568RG : 13”Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp. Rev.A July 2020 Unit Tape & Reel Quantity 2500 EA Page 1 Alfa-MOS Technology AFN6872S 15...