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AFN6872S - 150V N-Channel Enhancement Mode MOSFET

Download the AFN6872S datasheet PDF. This datasheet also covers the AFN6872S-Alfa variant, as both devices belong to the same 150v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN6872S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • ID=20A,RDS(ON)=18mΩ@VGS=10V.
  • ID=15A,RDS(ON)=20mΩ@VGS=6V.
  • Super high density cell design for extremely low RDS (ON).
  • DFN5X6-8L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN6872S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN6872S
Manufacturer Alfa-MOS
File Size 499.59 KB
Description 150V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN6872S Datasheet

Full PDF Text Transcription for AFN6872S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AFN6872S. For precise diagrams, and layout, please refer to the original PDF.

Alfa-MOS Technology AFN6872S 150V N-Channel Enhancement Mode MOSFET General Description AFN6872S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to pr...

View more extracted text
Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

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