AFN6872S Datasheet | Alfa-MOS

Description AFN6872S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features - ID=20A,RDS(ON)=18mΩ@VGS=10V - ID=15A,RDS(ON)=20mΩ@VGS=6V - Super high density cell design for extremely low RDS (ON) - DFN5X6-8L package design Application - Networking / Tele / Server - LED Lighting Applications - Quick Charger Applications - DC-DC Primary Side Switch Pin Define Pin 1~3 4 5~8 Symbol S G D Description Source Gate Drain Ordering Information Part Ordering No. Part Marking Package AFN6872SFN568RG 6872S DFN5X6-8L ※ 6872S : Parts Code ※ YYMMDD : Date Code ※ AFN6872SFN568RG : 13”Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.A July 2020 Unit Tape & Reel Quantity 2500 EA .alfa-mos. Page 1 Alfa-MOS Technology 150V N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25℃ Unless otherwise...