Download the AFN6882S datasheet PDF.
This datasheet also covers the AFN6882S-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
AFN6882S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Key Features
z 100V/20A,RDS(ON)=9.0mΩ@VGS=10V z 100V/15A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for extremely low
RDS (ON) z DFN5X6-8L package design.
Full PDF Text Transcription for AFN6882S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AFN6882S. For precise diagrams, and layout, please refer to the original PDF.
Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z 100V/20A,RDS(ON)=9.0mΩ@VGS=10V z 100V/15A,RDS(ON)=13mΩ@VGS=4.
AFN6882S Datasheet
