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AFN6882S - N-Channel MOSFET

This page provides the datasheet information for the AFN6882S, a member of the AFN6882S-Alfa N-Channel MOSFET family.

Description

AFN6882S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 100V/20A,RDS(ON)=9.0mΩ@VGS=10V z 100V/15A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design.

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Datasheet Details

Part number AFN6882S
Manufacturer Alfa-MOS
File Size 312.33 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6882S Datasheet
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Alfa-MOS Technology AFN6882S 100V N-Channel Enhancement Mode MOSFET General Description AFN6882S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z 100V/20A,RDS(ON)=9.0mΩ@VGS=10V z 100V/15A,RDS(ON)=13mΩ@VGS=4.
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