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AFN9004S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN9004S, a member of the AFN9004S-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN9004S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 40V/25A,RDS(ON)= 3.3mΩ@VGS=10V 40V/20A,RDS(ON)= 4.1mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Pin.

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Datasheet preview – AFN9004S

Datasheet Details

Part number AFN9004S
Manufacturer Alfa-MOS
File Size 658.08 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN9004S Datasheet
Additional preview pages of the AFN9004S datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology AFN9004S 40V N-Channel Enhancement Mode MOSFET General Description AFN9004S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 40V/25A,RDS(ON)= 3.3mΩ@VGS=10V 40V/20A,RDS(ON)= 4.1mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Pin Description ( TO-263-2L ) Application Power supply --- Secondary synchronous rectification DC/DC converter Power tools Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.
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