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AFN9498 - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN9498, a member of the AFN9498-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN9498, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 100V/5A,RDS(ON)= 135mΩ@VGS=10V 100V/3A,RDS(ON)= 145mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin.

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Datasheet Details

Part number AFN9498
Manufacturer Alfa-MOS
File Size 761.83 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN9498 Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology AFN9498 100V N-Channel Enhancement Mode MOSFET General Description AFN9498, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 100V/5A,RDS(ON)= 135mΩ@VGS=10V 100V/3A,RDS(ON)= 145mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin Description ( TO-252-2L ) Application LED Backlight for LCD TV High Frequency Boost Converter Telecom Industrial power supplies Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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