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AFN9803S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN9803S, a member of the AFN9803S-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN9803S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/40A,RDS(ON)=2.8mΩ@VGS=10V 30V/32A,RDS(ON)=3.8mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design.

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Datasheet preview – AFN9803S

Datasheet Details

Part number AFN9803S
Manufacturer Alfa-MOS
File Size 488.77 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN9803S Datasheet
Additional preview pages of the AFN9803S datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology 65 General Description AFN9803S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-220-3L ) AFN9803S 30V N-Channel Enhancement Mode MOSFET Features 30V/40A,RDS(ON)=2.8mΩ@VGS=10V 30V/32A,RDS(ON)=3.8mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application OR-ing Server DC/DC Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.
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