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AFN9530 - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN9530, a member of the AFN9530-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN9530, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 90V/15A,RDS(ON)= 78mΩ@VGS=10V 90V/12A,RDS(ON)= 88mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-2L package design Pin.

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Datasheet preview – AFN9530

Datasheet Details

Part number AFN9530
Manufacturer Alfa-MOS
File Size 569.27 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN9530 Datasheet
Additional preview pages of the AFN9530 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology AFN9530 90V N-Channel Enhancement Mode MOSFET General Description AFN9530, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 90V/15A,RDS(ON)= 78mΩ@VGS=10V 90V/12A,RDS(ON)= 88mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-2L package design Pin Description ( TO-220-2L ) Application High Frequency Boost Converter LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.
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