AFN9530 Datasheet PDF

GENERAL DESCRIPTION

AFN9530, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

FEATURES

90V/15A,RDS(ON)= 78mΩ@VGS=10V 90V/12A,RDS(ON)= 88mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-2L package design Pin

DESCRIPTION

( TO-220-2L ) Application High Frequency Boost Converter LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking Package AFN9530T220TG AFN9530 AAAAAA TO-220-3L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN9530T220TG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.C July. 2011

DESCRIPTION

Gate Drain Source Unit Tube Quantity 50 EA Page 1 A