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AFP2323A - P-Channel MOSFET

This page provides the datasheet information for the AFP2323A, a member of the AFP2323A-Alfa P-Channel MOSFET family.

Datasheet Summary

Description

AFP2323A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -30V/-2.8A,RDS(ON)=155mΩ@VGS=-10.0V -30V/-2.4A,RDS(ON)=240mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design.

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Datasheet preview – AFP2323A

Datasheet Details

Part number AFP2323A
Manufacturer Alfa-MOS
File Size 696.12 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP2323A Datasheet
Additional preview pages of the AFP2323A datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP2323A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2323A 30V P-Channel Enhancement Mode MOSFET Features -30V/-2.8A,RDS(ON)=155mΩ@VGS=-10.0V -30V/-2.4A,RDS(ON)=240mΩ@VGS=-4.
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