AFP2325S Datasheet | Alfa-MOS

Description AFP2325S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-3L ) 150V P-Channel Enhancement Mode MOSFET Features -150V/-1.4A,RDS(ON)=745 mΩ@VGS=-10V -150V/-1.0A,RDS(ON)=800 mΩ@VGS=-6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2325SS23RG 25SYW SOT-23-3L ※ 25S parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFP2325SS23RG : 7” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.B Jan. 2016 Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page 1 Alfa-MOS Technology 150V P-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Drain-Source Voltage Gate - Source Voltage Parameter Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power...