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AFP2325S - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP2325S, a member of the AFP2325S-Alfa P-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

AFP2325S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -150V/-1.4A,RDS(ON)=745 mΩ@VGS=-10V -150V/-1.0A,RDS(ON)=800 mΩ@VGS=-6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

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Datasheet Details

Part number AFP2325S
Manufacturer Alfa-MOS
File Size 376.44 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP2325S Datasheet
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Alfa-MOS Technology General Description AFP2325S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFP2325S 150V P-Channel Enhancement Mode MOSFET Features -150V/-1.4A,RDS(ON)=745 mΩ@VGS=-10V -150V/-1.0A,RDS(ON)=800 mΩ@VGS=-6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No.
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