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AFP2325S - P-Channel Enhancement Mode MOSFET

Download the AFP2325S datasheet PDF. This datasheet also covers the AFP2325S-Alfa variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP2325S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • -150V/-1.4A,RDS(ON)=745 mΩ@VGS=-10V -150V/-1.0A,RDS(ON)=800 mΩ@VGS=-6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP2325S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP2325S
Manufacturer Alfa-MOS
File Size 376.44 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP2325S Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP2325A P-Channel MOSFET
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AFP2301AS 20V P-Channel MOSFET
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AFP2307A P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP2325S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFP2325S 150V P-Channel Enhancement Mode MOSFET Features -150V/-1.4A,RDS(ON)=745 mΩ@VGS=-10V -150V/-1.0A,RDS(ON)=800 mΩ@VGS=-6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No.