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AFP2325A - P-Channel MOSFET

This page provides the datasheet information for the AFP2325A, a member of the AFP2325A-Alfa P-Channel MOSFET family.

Datasheet Summary

Description

AFP2325A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z -100V/-1.0A,RDS(ON)=600mΩ@VGS=-10V z -100V/-0.5A,RDS(ON)=650mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z SOT-23 package design.

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Datasheet preview – AFP2325A

Datasheet Details

Part number AFP2325A
Manufacturer Alfa-MOS
File Size 499.60 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP2325A Datasheet
Additional preview pages of the AFP2325A datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP2325A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2325A 100V P-Channel Enhancement Mode MOSFET Features z -100V/-1.0A,RDS(ON)=600mΩ@VGS=-10V z -100V/-0.5A,RDS(ON)=650mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z SOT-23 package design Application z Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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