AFP3911W Datasheet | Alfa-MOS

Description AFP3911W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) 30V P-Channel Enhancement Mode MOSFET Features z -30V/-3A,RDS(ON)=68mΩ@VGS=-10V z -30V/-2A,RDS(ON)=88mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design Application z Smart Phones, Tablet PCs, Mobile puting : - Battery Switches - Load Switches - Power Management Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Ordering Information Part Ordering No. Part Marking Package AFP3911WFN226RG 391YW DFN2X2-6L ※ 391 parts...