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AFP3993 - P-Channel MOSFET

This page provides the datasheet information for the AFP3993, a member of the AFP3993-Alfa P-Channel MOSFET family.

Description

AFP3993, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -30V/-3.6A,RDS(ON)=150mΩ@VGS=-10.0V -30V/-3.2A,RDS(ON)=235mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design.

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Datasheet preview – AFP3993

Datasheet Details

Part number AFP3993
Manufacturer Alfa-MOS
File Size 576.87 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP3993 Datasheet
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Alfa-MOS Technology General Description AFP3993, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFP3993 30V P-Channel Enhancement Mode MOSFET Features -30V/-3.6A,RDS(ON)=150mΩ@VGS=-10.0V -30V/-3.2A,RDS(ON)=235mΩ@VGS=-4.
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