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AO3408L - N-Channel Enhancement Mode Field Effect Transistor

Download the AO3408L datasheet PDF. This datasheet also covers the AO3408 variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The AO3408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

AO3408L (Green Product) is offered in a lead -free package.

Key Features

  • VDS (V) = 20V ID = 5.8 A RDS(ON) < 26mΩ (VGS = 4.5V) RDS(ON) < 33mΩ (VGS = 2.5V) RDS(ON) < 42mΩ (VGS = 1.8V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 5.8 4.9 30 1.4 1 -55 to 150 Thermal Ch.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AO3408-AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AO3408 N-Channel 30V MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO3408 N-Channel Enhancement Mode Field Effect Transistor
AO3400 30V N-Channel MOSFET
AO3400A 30V N-Channel MOSFET
AO3401 30V P-Channel MOSFET
AO3401A 30V P-Channel MOSFET
AO3401L P-Channel MOSFET
AO3402 30V N-Channel MOSFET
AO3402L N-Channel MOSFET
AO3403 30V P-Channel MOSFET
AO3404 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Rev 3: July 2004 AO3408, AO3408L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description The AO3408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO3408L (Green Product) is offered in a lead -free package. Features VDS (V) = 20V ID = 5.8 A RDS(ON) < 26mΩ (VGS = 4.5V) RDS(ON) < 33mΩ (VGS = 2.5V) RDS(ON) < 42mΩ (VGS = 1.