Datasheet Details
| Part number | AO3403 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 320.06 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO3403_AlphaOmegaSemiconductors.pdf |
|
|
Overview: AO3403 30V P-Channel MOSFET General.
| Part number | AO3403 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 320.06 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO3403_AlphaOmegaSemiconductors.pdf |
|
|
|
The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) -30V -2.6A < 115mW < 150mW < 200mW SOT23 Top View Bottom View D D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum -30 ±12 -2.6 -2.2 -13 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 70 100 Maximum Junction-to-Lead Steady-State RqJL 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev 10.1: February 2024 www.aosmd.com Page 1 of 5 AO3403 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C -1 mA -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA -0.6 -1 -1.4 V ID(ON) On state drain current VGS=-10V, VDS=-5V -13 A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-2.6A VGS=-4.5V, ID=-2A TJ=125°C 88 115 mW 143 200 103 150 mW VGS=-2.5V, ID=-1A 139 200 mW gFS Forward Transconductance VDS=-5V, ID=-2.6A 8 S VSD Diode Forward Voltage IS=-1A,VGS=0V -0.78 -1 V IS Maximum Body-Diode Continuous Current -1.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VG
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO3403 | P-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO3400 | 30V N-Channel MOSFET |
| AO3400A | 30V N-Channel MOSFET |
| AO3401 | 30V P-Channel MOSFET |
| AO3401A | 30V P-Channel MOSFET |
| AO3401L | P-Channel MOSFET |
| AO3402 | 30V N-Channel MOSFET |
| AO3402L | N-Channel MOSFET |
| AO3404 | N-Channel MOSFET |
| AO3404A | N-Channel MOSFET |
| AO3405 | P-Channel MOSFET |