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AO3405 - P-Channel MOSFET

General Description

The AO3405 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AO3405 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = -30V ID = -2.6 A (V GS = -10V) RDS(ON) < 130mΩ (VGS = -10V) RDS(ON) < 180mΩ (VGS = -4.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±12 -2.6 -2.2 -30 1.4 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal.

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Full PDF Text Transcription for AO3405 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AO3405. For precise diagrams, tables, and layout, please refer to the original PDF.

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www.DataSheet4U.com AO3405 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3405 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3405 is Pb-free (meets ROHS & Sony 259 specifications). AO3405L is a Green Product ordering option. AO3405 and AO3405L are electrically identical. Features VDS (V) = -30V ID = -2.6 A (V GS = -10V) RDS(ON) < 130mΩ (VGS = -10V) RDS(ON) < 180mΩ (VGS = -4.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±12 -2.6 -2.