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AO3404A - N-Channel MOSFET

Datasheet Summary

Description

The AO3404A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS (V) = 30V ID = 5.8A RDS(ON) < 25mW RDS(ON) < 35mW (VGS = 10V) (VGS = 10V) (VGS = 4.5V) SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A,F TA=70°C ID Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 5.8 4.9 64 1.4 0.9 -55 to 150 Thermal.

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Datasheet Details

Part number AO3404A
Manufacturer Alpha & Omega Semiconductors
File Size 359.55 KB
Description N-Channel MOSFET
Datasheet download datasheet AO3404A Datasheet
Additional preview pages of the AO3404A datasheet.

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Full PDF Text Transcription

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AO3404A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3404A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = 30V ID = 5.8A RDS(ON) < 25mW RDS(ON) < 35mW (VGS = 10V) (VGS = 10V) (VGS = 4.5V) SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A,F TA=70°C ID Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 5.8 4.9 64 1.4 0.
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