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AO3434A Datasheet 30V N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

General Description

Product Summary The AO3434A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) Typical ESD protection 30V 4A < 52mΩ < 60mΩ < 78mΩ HBM Class 3A SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 4 3 20 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 70 100 Maximum Junction-to-Lead Steady-State RθJL 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev 1: Sep.

Overview

AO3434A 30V N-Channel MOSFET General.