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AO3434 - 30V N-Channel MOSFET

Description

The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO3434 30V N-Channel MOSFET General Description The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Product Summary VDS (V) = 30V ID = 4.2A RDS(ON) < 52mΩ RDS(ON) < 75mΩ ESD protected (VGS = 10V) (VGS = 10V) (VGS = 4.5V) SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol 10 sec Steady-State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current A,F TA=70°C Pulsed Drain Current B 4.2 3.5 ID 3.3 2.8 IDM 30 Power Dissipation TA=25°C TA=70°C 1.4 1.0 PD 0.9 0.
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