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AO4726 - N-Channel MOSFET

General Description

SRFETTM The AO4726 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

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Full PDF Text Transcription for AO4726 (Reference)

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AO4726 30V N-Channel MOSFET SRFET TM General Description SRFETTM The AO4726 uses advanced trench technology with a monolithically integrated Schottky diode to provide exc...

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hnology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.5mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive avalanche en

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