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AO4701 - P-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.

Key Features

  • VDS (V) = -30V ID = -5A RDS(ON) < 49mΩ (VGS = 10V) RDS(ON) < 64mΩ (VGS = 4.5V) RDS(ON) < 120mΩ (VGS = 2.5V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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July 2001 AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. Features VDS (V) = -30V ID = -5A RDS(ON) < 49mΩ (VGS = 10V) RDS(ON) < 64mΩ (VGS = 4.5V) RDS(ON) < 120mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D K A A S G 1 2 3 4 8 7 6 5 K K D D G SOIC-8 www.DataSheet4U.com S A Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain CurrentA Pulsed Drain Current B MOSFET -30 ±12 -5 -4.