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AO4700 - N-Channel MOSFET

General Description

The AO4700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for non-synchronous DC-DC conversion applications.

Key Features

  • VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for non-synchronous DC-DC conversion applications. Standard Product AO4700 is Pb-free (meets ROHS & Sony 259 specifications). AO4700L is a Green Product ordering option. AO4700 and AO4700L are electrically identical. D A A S G 1 2 3 4 8 7 6 5 K K D D Features VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 4A, VF<0.5V@3A K G S A SOIC-8 www.DataSheet4U.