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AO4702 - N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4702 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

A Schottky Diode is packaged in parallel to improve device performance in synchronous recitification applications, or H-bridge configurations.

Key Features

  • VDS (V) = 30V ID = 11A (VGS = 10V) RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 25mΩ (VGS = 4.5V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4702 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky Diode is packaged in parallel to improve device performance in synchronous recitification applications, or H-bridge configurations. Standard Product AO4702 is Pb-free (meets ROHS & Sony 259 specifications). AO4702L is a Green Product ordering option. AO4702and AO4702L are electrically identical. Features VDS (V) = 30V ID = 11A (VGS = 10V) RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 25mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A D S S S G D D D D K G S A SOIC-8 www.DataSheet4U.