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AO4704 - N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4704 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications.

The co-packaged Schottky Diode boosts efficiency further.

Key Features

  • VDS (V) = 30V ID = 13 A (VGS = 10V) RDS(ON) < 11.5mΩ (VGS = 10V) RDS(ON) < 13mΩ (VGS = 4.5V).

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Other Datasheets by Alpha & Omega Semiconductors

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4704 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4704 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky Diode boosts efficiency further. AO4704 is Pb-free (meets ROHS & Sony 259 specifications). AO4704L is a Green Product ordering option. AO4704 and AO4704L are electrically identical. Features VDS (V) = 30V ID = 13 A (VGS = 10V) RDS(ON) < 11.5mΩ (VGS = 10V) RDS(ON) < 13mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A SOIC-8 S/A S/A S/A G 1 2 3 4 8 7 6 5 D/K D/K D/K D/K D K www.DataSheet4U.