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AO4800B - 30V Dual N-Channel MOSFET

Download the AO4800B datasheet PDF. This datasheet also covers the AO4800BL variant, as both devices belong to the same 30v dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The AO4800B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.

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Note: The manufacturer provides a single datasheet file (AO4800BL_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4800B 30V Dual N-Channel MOSFET General Description The AO4800B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 100% UIS Tested 100% Rg Tested 30V 6.9A < 27mΩ < 32mΩ < 50mΩ Top View SOIC-8 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.