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AO4800BL - Dual N-Channel MOSFET

General Description

The AO4800B/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.

Standard Product AO4800B/L is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested! S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 D1 D2 SOIC-8 G2 S1 S2 Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation B Avalanche Current B Maximum 30 ±12 6.9 5.8 40 1.9 1.2 12 22 -55 to 150 Unit.

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www.DataSheet4U.com AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4800B/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. Standard Product AO4800B/L is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.