The AO4801A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is suitable for use as a load switch or in PWM applications.
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AO4801A
30V P-Channel MOSFET
General Description
Product Summary
The AO4801A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V)
100% UIS Tested 100% Rg Tested
-30V -5A < 48mΩ < 57mΩ < 80mΩ
SOIC-8
D1
Top View
Bottom View
SOIC-8
Top View
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1
G1 4 5 D1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.