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AO4850 - Dual N-Channel MOSFET

Datasheet Summary

Description

The AO4850 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs may be used in H-bridge, Inverters and other applications.

AO4850 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 75V (VGS = 10V) ID = 3.1A RDS(ON) < 130mΩ (VGS = 10V) RDS(ON) < 165mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 www. DataSheet4U. com D2 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation Avalanche Current B B Symbol VDS VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD IAR EAR TJ, TSTG Maximum 10 Sec Steady State 75 ±25 3.1 2.4.

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Datasheet Details

Part number AO4850
Manufacturer Alpha & Omega Semiconductors
File Size 139.05 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AO4850 Datasheet
Additional preview pages of the AO4850 datasheet.

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Full PDF Text Transcription

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AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4850 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs may be used in H-bridge, Inverters and other applications. AO4850 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 75V (VGS = 10V) ID = 3.1A RDS(ON) < 130mΩ (VGS = 10V) RDS(ON) < 165mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 www.DataSheet4U.
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