Datasheet4U Logo Datasheet4U.com

AO4854 - Dual N-Channel MOSFET

General Description

The AO4854 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO4854 Dual N-Channel MOSFET Kexin
AO4854L Dual N-Channel MOSFET FreesCale
AO4852 N-Channel MOSFET FreesCale
AO4800 Dual N-Channel 30V MOSFET VBsemi
AO4801 Dual P-Channel 30V MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4850 Dual N-Channel MOSFET
AO4800 30V Dual N-Channel MOSFET
AO4800B 30V Dual N-Channel MOSFET
AO4800BL Dual N-Channel MOSFET
AO4801 Dual P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AO4854 30V Dual N-channel MOSFET General Description Product Summary The AO4854 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 4V) ESD Protected 100% UIS Tested 100% Rg Tested 30V 8A <19mΩ < 23mΩ < 26mΩ Top View SOIC-8 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 D1 D1 G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.