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AO4932 - Asymmetric Dual N-Channel MOSFET

Description

The AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.

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AO4932 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. FET1(N-Channel) VDS= 30V ID= 11A (VGS=10V) RDS(ON) < 12.5mΩ (VGS=10V) < 15mΩ (VGS=4.5V) FET2(N-Channel) 30V 8A (VGS=10V) RDS(ON) < 19mΩ (VGS=10V) < 23mΩ (VGS=4.
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