Datasheet Details
| Part number | AO4946 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 189.33 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download | AO4946 Download (PDF) |
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Overview: AO4946 30V Dual N-Channel MOSFET SRFET General.
| Part number | AO4946 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 189.33 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download | AO4946 Download (PDF) |
|
|
|
SRFET TM The AO4946 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a low and high side switch in SMPS and general purpose applications.
TM Product Summary VDS (V) = 30V ID = 8.6A (VGS = 10V) RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 20mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View Top View D1/S2 G2 S1 G1 Pin1 D2 D2 D1/S2 D1/S2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Avalanche Current B B B Maximum 30 ±12 8.6 6.9 40 16 38 2 1.3 -55 to 150 Units V V A A mJ W ° C VGS TA=25° C TA=70° C ID IDM IAR EAR PD TJ, TSTG Repetitive avalanche energy L=0.3mH TA=25° C Power Dissipation TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 32 Max 62.5 90 40 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd.
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