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AO4940 - Dual N-Channel Enhancement Mode Field Effect Transistor

Description

The AO4940 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.

Features

  • FET1 VDS (V) = 30V ID = 9.1A RDS(ON) < 15mΩ RDS(ON) < 23mΩ FET2 V DS(V) = 30V I D=7.5A (VGS = 10V) < 23m Ω (V GS = 10V) < 36m Ω (V GS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SOIC-8 SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Max FET1 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.3mH B TA=25°C Power DissipationA TA.

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Full PDF Text Transcription

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AO4940 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description The AO4940 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4940 is Pb-free (meets ROHS & Sony 259 www.DataSheet4U.com specifications). Features FET1 VDS (V) = 30V ID = 9.1A RDS(ON) < 15mΩ RDS(ON) < 23mΩ FET2 V DS(V) = 30V I D=7.5A (VGS = 10V) < 23m Ω (V GS = 10V) < 36m Ω (V GS = 4.
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