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AO6420 - 60V N-Channel MOSFET

General Description

The AO6420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO6420 60V N-Channel MOSFET General Description The AO6420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS (V) = 60V ID = 4.2A (VGS = 10V) RDS(ON) < 60mW (VGS = 10V) RDS(ON) < 75mW (VGS = 4.5V) TSOP6 Top View Bottom View Top View D1 6 D D2 5D G3 4S G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A,F TA=70°C ID Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 4.2 3.4 20 2.00 1.