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AO6422 - 20V N-Channel MOSFET

General Description

The AO6422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for general purpose application.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO6422 20V N-Channel MOSFET General Description The AO6422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application. Product Summary VDS = 20V ID = 5A (VGS = 4.5V) RDS(ON) < 44mΩ (VGS = 4.5V) RDS(ON) < 55mΩ (VGS = 2.5V) RDS(ON) < 72mΩ (VGS = 1.8V) TSOP6 Top View Bottom View Top View D D D G Pin1 1 2 3 6 5 4 D D S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B Power Dissipation A TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG 2.0 1.3 VGS 5 4.2 Steady State 20 ±8 3.9 3 30 1.1 0.