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AO7800 - 20v Dual N-Channel MOSFET

Description

The AO7800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT363 footprint.

It can be used for a wide variety of applications, including load switching, low current inverters and low current DCDC converters.

Features

  • VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) RDS(ON) < 300mW (VGS = 4.5V) RDS(ON) < 350mW (VGS = 2.5V) RDS(ON) < 450mW (VGS = 1.8V) SC70-6L (SOT-363) Top View Bottom View Pin1 Pin1 D1 S1 1 6 D1 G1 2 5 G2 G1 D2 3 4 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Power Dissipation A TA=25°C TA=70°C PD Junction and Stor.

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Full PDF Text Transcription

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AO7800 20v Dual N-Channel MOSFET General Description The AO7800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT363 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DCDC converters.It is ESD protected. Features VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) RDS(ON) < 300mW (VGS = 4.5V) RDS(ON) < 350mW (VGS = 2.5V) RDS(ON) < 450mW (VGS = 1.
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