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AO7801 - Dual P-Channel MOSFET

Description

The AO7801 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT363 footprint.

Features

  • VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 520mΩ (VGS = -4.5V) RDS(ON) < 700mΩ (VGS = -2.5V) RDS(ON) < 950mΩ (VGS = -1.8V) SC70-6L (SOT-363) Top View Bottom View Pin1 S1 1 6 G1 2 5 D2 3 4 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A Pulsed Drain Current B TA=25°C TA=70°C ID IDM Power Dissipation A TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TST.

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Full PDF Text Transcription

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AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO7801 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT363 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM. Features VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 520mΩ (VGS = -4.5V) RDS(ON) < 700mΩ (VGS = -2.5V) RDS(ON) < 950mΩ (VGS = -1.
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