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AOB440 - N-Channel MOSFET

Datasheet Summary

Description

The AOB440 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.

This device is suitable for use in UPS, high current switching applications.

Standard Product AOB440 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 60V ID = 75 A (V GS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B C Maximum 60 ±20 75 75 150 80 320 150 75 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ,.

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Datasheet Details

Part number AOB440
Manufacturer Alpha & Omega Semiconductors
File Size 111.11 KB
Description N-Channel MOSFET
Datasheet download datasheet AOB440 Datasheet
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www.DataSheet4U.com AOB440 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB440 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. Standard Product AOB440 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 60V ID = 75 A (V GS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.
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