AOD417 Datasheet P-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Datasheet Details

The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.

-RoHS Compliant -Halogen Free*

AOD417 P-Channel Enhancement Mode Field Effect Transistor General.

es VDS (V) = -30V ID = -25A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V) 100% UIS Tested! 100% Rg Tested! Top View D TO-252 D-PAK Bottom View D GS SG G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C G Current B,G TA=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C VGS ID IDM IAR EAR TC=25°C Power Dissipation B.

Brand Logo	Part Number	Description	Manufacturer
	AOD417	N-Channel MOSFET	INCHANGE