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AOD417 - P-Channel MOSFET

Datasheet Summary

Description

The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.

Features

  • es VDS (V) = -30V ID = -25A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V) 100% UIS Tested! 100% Rg Tested! Top View D TO-252 D-PAK Bottom View D GS SG G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C G Current B,G TA=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C VGS ID IDM IAR EAR TC=25°C Power Dissipation B.

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Datasheet Details

Part number AOD417
Manufacturer Alpha & Omega Semiconductors
File Size 138.69 KB
Description P-Channel MOSFET
Datasheet download datasheet AOD417 Datasheet
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Full PDF Text Transcription

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AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Features VDS (V) = -30V ID = -25A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V) 100% UIS Tested! 100% Rg Tested! Top View D TO-252 D-PAK Bottom View D GS SG G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C G Current B,G TA=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.
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