Datasheet Details
| Part number | AON7421 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 375.82 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AON7421_AlphaOmegaSemiconductors.pdf |
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Overview: AON7421 20V P-Channel MOSFET General.
| Part number | AON7421 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 375.82 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AON7421_AlphaOmegaSemiconductors.pdf |
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The AON7421 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) 100% UIS Tested 100% Rg Tested -20V -50A < 4.6mW < 5.8mW < 9.0mW DFN 3.3x3.3 EP Top View Bottom View Top View S1 S2 S3 G4 8D 7D 6D 5D G Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±12 -50 -39 -200 -30 -24.5 50 125 83 33 6.2 4 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 16 45 Maximum Junction-to-Case Steady-State RqJC 1.1 Max 20 55 1.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.2.1: October 2023 www.aosmd.com Page 1 of 6 AON7421 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -20 V IDSS Zero Gate Voltage Drain Current VDS=-20V, VGS=0V TJ=55°C -1 -5 mA IGSS Gate-Body leakage current VDS=0V, VGS=±12V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -0.5 -0.8 -1.2 V ID(ON) On state drain current VGS=-10V, VDS=-5V -200 A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-20A VGS=-4.5V, ID=-20A TJ=125°C 3.7 4.6 5 6.2 mW 4.5 5.8 mW VGS=-2.5V, ID=-20A 6.3 9 mW gFS Forward Transconductance
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