Datasheet Details
| Part number | AON7422G |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 363.33 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7422G-AlphaOmegaSemiconductors.pdf |
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Overview: AON7422G 30V N-Channel MOSFET General.
| Part number | AON7422G |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 363.33 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7422G-AlphaOmegaSemiconductors.pdf |
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• Low RDS(ON) • Optimized for Load Switch • High Current Capability • ESD Protected • RoHS and Halogen-Free Compliant Applications • Battery Charging & Discharging for NB Battery Pack Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 32A < 4.6mΩ < 7.2mΩ HBM Class 2 DFN 3x3 EP Top View Bottom View Pin 1 D Top View S1 8D S2 7D S3 6D G G4 5D S Orderable Part Number AON7422G Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C VDS Spike 10μs ID IDM IDSM IAS EAS VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 32 32 118 25 20 30 45 36 28 11 5 3.2 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s 20 Maximum Junction-to-Ambient A D Steady-State RqJA 45 Maximum Junction-to-Case Steady-State RqJC 3.7 Max 25 55 4.5 Units °C/W °C/W °C/W Rev1.1: October 2023 www.aosmd.com Page 1 of 6 AON7422G Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 33 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum
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