Datasheet Details
| Part number | AON7422E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 348.82 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7422E-AlphaOmegaSemiconductors.pdf |
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Overview: AON7422E 30V N-Channel MOSFET General.
| Part number | AON7422E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 348.82 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7422E-AlphaOmegaSemiconductors.pdf |
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Product Summary The AON7422E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) ESD protected 100% UIS Tested 100% Rg Tested 30V 40A < 4.3mΩ < 6.0mΩ DFN 3x3 EP Top View Bottom View Pin 1 Top View 1 8 2 7 G 3 6 4 5 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 40 31 200 20 16 45 101 36 14 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 30 60 Maximum Junction-to-Case Steady-State RθJC 2.8 Max 40 75 3.4 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 2.0: June 2014 www.aosmd.com Page 1 of 6 AON7422E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 36 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±16V 5 uA IGSS Gate-Body leakage current VDS=0V, VGS=± 20V 10 uA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 1.85 2.4 V ID(ON) On state drain current VGS=10V, VDS=5V 200 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 3.5 4.3 mΩ 5.5 6.8 VGS=4.5V, ID=16A 4.5 6 mΩ gFS Forward Transconductance VDS=5V, ID=20A
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