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AONA66642 Datasheet 60v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AONA66642 60V N-Channel AlphaSGT TM Preliminary General.

General Description

• Trench Power MV MOSFET Technology • DFN5x6 Top Exposed • Low RDS(ON) • Low Gate Charge • RoHS 2.0 and Halogen-Free Compliant Applications • High-frequency Switching FET Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 100% UIS Tested 100% Rg Tested Max Tj=175°C 60V 264A < 1.35mΩ < 1.5mΩ DFN5X6 D Top View Top View Bottom View S1 8D PIN1 S2 S S3 7D 6D G4 5D G PIN1 S Orderable Part Number AONA66642 Package Type DFN 5x6 Form Minimum Order Quantity Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 264 186 1056 49 41 67 673 214 107 7.5 5.2 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case,bottom Maximum Junction-to-Case,top t ≤ 10s Steady-State Steady-State Steady-State Symbol RqJA RqJC RqJC Typ 15 40 0.4 0.35 Max 20 50 0.75 0.7 Units °C/W °C/W °C/W °C/W Rev.0.1: January 2025 www.aosmd.com Page 1 of 2

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