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AONA66642 - 60V N-Channel MOSFET

General Description

Trench Power MV MOSFET Technology DFN5x6 Top Exposed Low RDS(ON) Low Gate Charge RoHS 2.0 and Halogen-Free Compliant Applications High-frequency Switching FET Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 100

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AONA66642 60V N-Channel AlphaSGT TM Preliminary General Description • Trench Power MV MOSFET Technology • DFN5x6 Top Exposed • Low RDS(ON) • Low Gate Charge • RoHS 2.0 and Halogen-Free Compliant Applications • High-frequency Switching FET Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 100% UIS Tested 100% Rg Tested Max Tj=175°C 60V 264A < 1.35mΩ < 1.