Datasheet Details
| Part number | AONA66916 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 454.54 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 AONA66916 Datasheet
|
|
|
| Part number | AONA66916 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 454.54 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
AONA66916 Datasheet
|
|
|
|
• AlphaSGTTM N-Channel Power MOSFET • Combination of Low RDS(ON)and wide safe operating area (SOA) • Higher in-rush current enabled for faster start-up and shorter down time • PB-free lead plating, RoHS complaint, Halogen-free • Top Side cooling for improved thermal performance Applications • Telecom • Solar • DC-DC Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested Max Tj=175°C Top View DFN5X6 Bottom View 100V 197A < 3.4mΩ < 4.6mΩ D PIN1 Orderable Part Number AONA66916 PIN1 Package Type DFN 5x6 G S Form Minimum Order Quantity Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 197 139 330 30 25 60 180 300 150 7.5 5.2 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case,bottom Maximum Junction-to-Case,top t ≤ 10s Steady-State Steady-State Steady-State Symbol RqJA RqJC RqJC Typ 15 40 0.3 0.25 Max 20 50 0.55 0.5 Units °C/W °C/W °C/W °C/W Rev.1.1: July 2023 www.aosmd.com Page 1 of 7 AONA66916 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=100V, VGS=0V Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance Forward Transconductance D
AONA66916 100V N-Channel AlphaSGT TM General.
| Part Number | Description |
|---|---|
| AONA66642 | 60V N-Channel MOSFET |
| AON1605 | 20V P-Channel MOSFET |
| AON1606 | 20V N-Channel MOSFET |
| AON1610 | 20V N-Channel MOSFET |
| AON1611 | P-Channel MOSFET |
| AON1620 | 12V N-Channel MOSFET |
| AON1634 | N-Channel MOSFET |
| AON2240 | 40V N-Channel MOSFET |
| AON2260 | 60V N-Channel MOSFET |
| AON2290 | 100V N-Channel MOSFET |