Datasheet Details
| Part number | AOND62930 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 372.22 KB |
| Description | 100V Dual N-Channel MOSFET |
| Download | AOND62930 Download (PDF) |
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Overview: AOND62930 100V Dual N-Channel AlphaSGT TM General.
| Part number | AOND62930 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 372.22 KB |
| Description | 100V Dual N-Channel MOSFET |
| Download | AOND62930 Download (PDF) |
|
|
|
• Trench Power AlphaSGTTM technology • Dual N-Ch MOSFET • Layout optimized • RoHS and Halogen-Free Compliant Applications • Dimming MOSFETs Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 7A < 68mΩ < 94mΩ DFN5X6 EP2 Top View Bottom View Top View D1 D2 PIN1 PIN1 SS1 1 GS1 2 SS2 3 GG2 4 8 D1 7 D1 6 D2 5 D2 G1 G2 S1 S2 Orderable Part Number AOND62930 Package Type DFN 5x6 EP2 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 7 4.5 25 4.5 3.5 4 0.8 7.3 2.9 3.5 2.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 30 55 Maximum Junction-to-Case Steady-State RqJC 14 Max 35 66 17 Units °C/W °C/W °C/W Rev.1.0: October 2018 www.aosmd.com Page 1 of 6 AOND62930 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.7 VGS=10V, ID=5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=3A gFS Forward Transconductance VDS=5V, ID=5A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Cis
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