Datasheet Details
| Part number | AOND32324 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 542.60 KB |
| Description | 30V Dual Complementary MOSFET |
| Datasheet | AOND32324-AlphaOmegaSemiconductors.pdf |
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Overview: AOND32324 30V Dual Complementary MOSFET General.
| Part number | AOND32324 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 542.60 KB |
| Description | 30V Dual Complementary MOSFET |
| Datasheet | AOND32324-AlphaOmegaSemiconductors.pdf |
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• Pch+Nch Complementary MOSFET • Trench Power MOSFET • Low RDS(ON) • Low Gate Charge • Excellent Thermal Performance • RoHS and Halogen Free Compliant Applications • Motor Drive • DC-FAN Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V -30V 16A -16A < 14mΩ < 12mΩ < 18mΩ < 19.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 EP2 Top View D1 D2 SS1 1 8 D1 GS1 2 7 D1 SS2 3 6 D2 G1 G2 GG2 4 5 D2 PIN1 S1 S2 Orderable Part Number AOND32324 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±20 ±25 Continuous Drain Current G TC=25°C TC=100°C ID 16 -16 16 -16 Pulsed Drain Current C IDM 50 -65 Continuous Drain Current TA=25°C TA=70°C 13 -15 IDSM 10 -12 Avalanche Current C IAS 22 33 Avalanche energy L=0.1mH C EAS 24 54 TC=25°C Power Dissipation B TC=100°C PD 12.5 5 30 12 TA=25°C Power Dissipation A TA=70°C 3.5 4.1 PDSM 2.2 2.6 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 Typ Q2 Max Q1 Max Q2 25 20 35 30 50 48 70 65 7 3.5 10 4.2 Units °C/W °C/W °C/W Rev.1.1: October 2023 www.aosmd.com Page 1 of 11 AOND32324 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.5 VGS=10V, ID=12A RDS(ON) Static Drain-Source On-Resistance TJ=1
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