Datasheet Details
| Part number | AONS21113 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 618.53 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet |
 AONS21113 Datasheet
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| Part number | AONS21113 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 618.53 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet |
AONS21113 Datasheet
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• Latest advanced trench technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in load switch • Battery protection charge/discharge Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) 100% UIS Tested 100% Rg Tested -20V -70A < 2.2mΩ < 2.5mΩ < 3.6mΩ DFN5X6 D Top View Bottom View Top View PIN1 Orderable Part Number AONS21113 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current G TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±12 -70 -70 -280 -44 -35 -75 281 138 55 6.2 4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 0.6 Max 20 50 0.9 Units °C/W °C/W °C/W Rev.3.0: June 2020 www.aosmd.com Page 1 of 6 AONS21113 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage ID=-250mA, VGS=0V VDS=-20V, VGS=0V VDS=0V, VGS=±12V VDS=VGS, ID=-250mA VGS=-10V, ID=-20A -20 TJ=55°C -0.3 RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-20A VGS=-2.5V, ID=-20A Forward Transconductance VDS=-5V, ID=-20A Diode Forward Voltage IS=-1A, VGS=0V Maximum Body-Di
AONS21113 20V P-Channel MOSFET General.
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