Datasheet Details
| Part number | AONS21307 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.91 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet |
 AONS21307 Datasheet
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| Part number | AONS21307 |
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| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.91 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet |
AONS21307 Datasheet
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• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in load switch • Battery Protection Charge/Discharge Top View DFN5X6 Bottom View AONS21307 30V P-Channel MOSFET Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) 100% UIS Tested 100% Rg Tested -30V -24A < 11mΩ < 18.5mΩ D PIN1 Orderable Part Number AONS21307 PIN1 Package Type DFN 5x6 Form Tape & Reel G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -24 -24 -96 -17 -14 33 54 38 15 5.0 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 20 45 Maximum Junction-to-Case Steady-State RθJC 2.7 Max 25 55 3.3 Units °C/W °C/W °C/W Rev.1.0: October 2017 www.aosmd.com Page 1 of 6 AONS21307 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -1.3 VGS=-10V, ID=-20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-20A gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitanc
General.
| Part Number | Description |
|---|---|
| AONS21303C | 30V P-Channel MOSFET |
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| AONS30300 | 30V N-Channel MOSFET |
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