Datasheet Details
| Part number | AONS21309C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 399.91 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet |
 AONS21309C Datasheet
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| Part number | AONS21309C |
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| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 399.91 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet |
AONS21309C Datasheet
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• Latest advanced trench technology • Low RDS(ON) • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -70A < 3.8mΩ < 5.7mΩ Applications • Notebook AC-in load switch • Battery protection charge/discharge 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 Orderable Part Number AONS21309C S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current G TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -70 -70 -280 -29 -23 -55 151 125 50 5.0 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 20 45 Maximum Junction-to-Case Steady-State RqJC 0.7 Max 25 55 1 Units °C/W °C/W °C/W Rev.2.2: July 2024 www.aosmd.com Page 1 of 6 AONS21309C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -1.3 VGS=-10V, ID=-20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-20A gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current
AONS21309C 30V P-Channel MOSFET General.
| Part Number | Description |
|---|---|
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